?guangdong hottech industrial co.,ltd e-mail:hkt@ heketai.com 1 / 4 HCN4403(pnp) replacement type : 2n4403 features ? power dissipation maximum ratings (t a =25c unless otherwise noted) electrical characteristics (t a =25c unless otherwise noted) parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =-100ua, i e =0 -40 v collector-emitter breakdown voltage v ceo i c =-1ma, i b =0 -40 v emitter-base breakdown voltage v ebo i e =-100ua , i c =0 -5 v collector cut-off current i cbo v cb =-35v , i e =0 -100 na emitter cut-off current i ebo v eb =-5v , i c =0 -100 na dc current gain h fe(1) v ce =-1v , i c =-0.1ma 30 h fe(2) v ce =-1v,i c =-1ma 60 h fe(3) v ce =-1v,i c =-10ma 100 h fe(4) v ce =-2v,i c =-150ma 100 300 h fe(5) v ce =-2v,i c =-500ma 20 collector-emitter saturation voltage v ce(sat)1 i c =-150ma , i b =-15ma -0.4 v v ce(sat)2 i c =-500ma,i b =-50ma -0.75 v base-emitter saturation voltage v be(sat)1 i c =-150ma , i b =-15ma -0.75 -0.95 v v be(sat)2 i c =-500ma,i b =-50ma -1.3 v collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 8.5 pf transition frequency f t v ce =-10v,i c =-20ma,f=100mhz 200 mhz delay time t d v cc =-30v, i c =-150ma i b1 =- i b2 =-15ma 15 ns rise time t r 20 ns storage time t s 225 ns fall time t f 30 ns parameter symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -40 v emitter-base voltage v ebo -5 v collector current-continuous i c -600 ma collector power dissipation p c 0.625 w junction temperature t j 150 c thermal resistance junction t o ambient r ?ja 200 c/w storage temperature t stg -55~+150 c to-92 1:emitter 2:base 3:collector switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 2 / 4 HCN4403(pnp) typical characteristics -1 -10 -100 10 100 1000 -1 -10 -100 -10 -100 -0.1 -1 -10 1 -1 -10 -10 0 25 50 75 100 125 150 0 125 250 375 500 625 750 -0.0 -0.4 -0.8 -1.2 -0.1 -1 -10 -100 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -0 -2 -4 -6 -0 -50 -100 -150 -200 -250 f t i c h fe common emitter v ce =-2v t a =100 t a =25 dc current gain h fe collector current i c (ma) i c -30 -300 -30 -3 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) =10 t a =25 t a =100 i c v cesat -700 -600 50 1 10 -30 c ob c ib reverse voltage v (v) f=1mhz i e =0/i c =0 t a =25 v cb / v eb c ob / c ib capacitance c (pf) -100 -600 -3 -30 v ce =-10v t a =25 transition frequency f t (mhz) collector current i c (ma) collector power dissipation p c (mw) ambient temperature t ( ) p c t a v be i c -600 t a =25 t a =100 common emitter v ce =-2v collector current i c (ma) base-emit er voltage v be (v) -600 -30 -3 =10 base-emitter saturation voltage v besat (v) collector current i c (ma) t a =25 t a =100 -600 i c v besat static characteristic coll ector current i c (ma) collector-emitter voltage v ce (v) -1ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.4ma -0.3ma -0.2ma i b =-0.1ma common emitter t a =25 switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 3 / 4 HCN4403(pnp) symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 to-92 package outline dimensions symbol dimensions in millimeters dimensions in inches min. max. min. max. a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4.300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e 1.270 typ. 0.050 typ. e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 to-92 package outline dimensions switching transistor
?guangdong hottech industrial co.,ltd e-mail:hkt@heketai.com 4 / 4 HCN4403(pnp) to-92 package tapeing dimension switching transistor
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